Successful development of 1.2 kV 4H-SiC MOSFETs with the very low on-resistance of 5 mΩcm2

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Miura, Naruhisa ^a   Fujihira, Keiko ^a   Nakao, Yukiyasu ^a   Watanabe, Tomokatsu ^a   Tarui, Yoichiro ^a   Kinouchi, Shin Ichi ^a   Imaizumi, Masayuki ^a   Oomori, Tatsuo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; SILICON CARBIDE; THERMAL EFFECTS;

CELL STRUCTURE; ELECTRICAL CHARACTERISTICS; MINIATURIZED UNITS; TEMPERATURE DEPENDENCE;

MOSFET DEVICES;

EID: 34247526066     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Imaizumi, J. Tanimura, Y. Tarui, H. Sugimoto, K. Ohtsuka, T. Takami, T. Ozeki, "SiC homoepitaxy on Al-ion-implanted layers for fabricating power device structures," J. Cryst. Growth, vol. 237-239, pp. 1219-1223, 2002.
2. 2 4H-SiC epilayer channel MOSFET," Int. Conf. Silicon Carbide and Related Materials 2005, WC2, September 18-23, 2005, Pittsburgh, USA.
3. M. Imaizumi, Y. Tarui, S. Kinouchi, H. Nakatake, Y. Nakao, T. Watanabe, K. Fujihira, N. Miura, T. Takami, and T. Ozeki, "Switching characteristics of SiC-MOSFET and SBD power modules," Int. Conf. Silicon Carbide and Related Materials 2005, RPD1, September 18-23, 2005. Pittsburgh, USA.
4. 2O Anneal," Electron Device Lett., vol.25, pp. 734-736, November 2004.