650V SOI LIGBT for switch-mode power supply application

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Letavic, T ^a   Petruzzello, J ^a   Claes, J ^b   Eggenkamp, P ^b   Janssen, E ^b   Van Der Wal, A ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON ON INSULATOR TECHNOLOGY;

DEVICE PROTECTION CIRCUITRY; HIGH VOLTAGE DEVICE; SWITCH MODE POWER SUPPLY;

ELECTRIC POWER SYSTEMS;

EID: 34247530448     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Petruzzello et al., Proc IEEE ISPSD 2002, pp. 117
2. Udrea et al., Proc IEEE ISPSD 2005, pp. 267
3. Schroder, Semiconductor Material and Device Characterization, Wiley and Sons, 1990
4. Garneret al., Proc IEEE ISPSD 2001 pp 335
5. Udrea et al., Proc IEEE ISPSD1995 pp 190
6. Ramamurthy et al., IEEE Trans Power Elec, vol. 14 No 4 pg 601-606