Improved performance of 4H-SiC double reduced surface field metal-oxide-semiconductor field-effect transistors by increasing RESURF doses

Applied Physics Express

Volumn 1, Issue 10, 2008, Pages 1014031-1014033

  Noborio, Masato ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FABRICATION; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; ION BEAMS; IONIZATION OF GASES; MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; TRANSISTORS;

BREAK DOWN VOLTAGES; DOPING CONCENTRATIONS; DOUBLE RESURF; DRIFT RESISTANCES; ELEVATED TEMPERATURES; FABRICATED DEVICES; HIGH DOSES; IMPROVED PERFORMANCES; MOS FETS; POWER DEVICES; REDUCED SURFACE FIELDS; SEMI-CONDUCTORS;

MOSFET DEVICES;

EID: 57649087962     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.101403     Document Type: Article

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