Room-temperature operation of buffer-free GaSb-AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 μm

IEEE Photonics Technology Letters

Volumn 19, Issue 20, 2007, Pages 1628-1630

  Mehta, M ^a   Jallipalli, A ^a   Tatebayashi, J ^a   Kutty, M N ^a   Albrecht, A ^a   Balakrishnan, G ^a   Dawson, L R ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

GaAs; GaSb; Interfacial misfits (IMFs); Semiconductor lasers

Indexed keywords

LASER PULSES; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE EMITTING LASERS; WAVELENGTH;

ANTIMONIDE-BASED EMITTERS; INTERFACIAL MISFIT LAYER;

QUANTUM WELL LASERS;

EID: 35148831147     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.904928     Document Type: Article

References (17)

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