Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 173-175

  Wada, Hiroshi ^a,b   Kamijoh, Takeshi ^b  

^a IEEE

^b OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC CURRENTS; HEAT TREATMENT; PRESSURE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES; TEMPERATURE;

INDIUM GALLIUM ARSENIC PHOSPHIDE LASER; ROOM TEMPERATURE CONTINUOUS WAVE OPERATION; VAN DER WAALS BONDING; WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0030087106     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484231     Document Type: Article

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