Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(1 0 0) substrate

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1636-1641

  Balakrishnan, Ganesh ^b   Jallipalli, Anitha ^b   Rotella, Paul ^b   Huang, Shenghong ^b   Khoshakhlagh, Arezou ^b   Amtout, Abdenour ^b,c   Krishna, Sanjay ^a,b   Dawson, L Ralph ^b   Huffaker, Diana L ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c EMCORE CORPORATION   (United States)

Author keywords

Integrated optoelectronics; Semiconductor lasers

Indexed keywords

BRAGG REFLECTORS; LATTICE MISMATCH; ROOM TEMPERATURE;

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); INTEGRATED OPTOELECTRONICS; LATTICE CONSTANTS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

SEMICONDUCTOR LASERS;

EID: 33845631099     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.885342     Document Type: Article

References (32)

1. A. Georgakilas, P. Panayotatos, J. Stoemenos, J.-L. Mourrain, and A. Christou, "Achievements and limitations in optimized GaAs films grown on Si by molecular-beam epitaxy," J. Appl. Phys.,vol. 71, pp. 2679-2699, Jan. 1992.
2. J. C. C. Fan and J. M. Poate, Eds., Heteroepitaxy on Silicon, vol. 67, Pittsburgh, PA: Materials Research Society, 1986.
3. J. C. C. Fan, J. M. Phillips, and B. Y. Tasur, Eds., Heteroepitaxy on Silicon II, vol. 91, Pittsburgh, PA: Materials Research Society, 1987.
4. H. K. Choi, R. Hull, H. Ishiwara, and R. J. Nemanich, Eds., Heteroepitaxy on Silicon: Fundamentals, Structure and Devices, vol. 116, Pittsburgh, PA: Materials Research Society, 1988.
5. T. H. Windhorn, G. M. Metze, B. Y. Tsaur, and J. C. Fan, "AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate," Appl. Phys. Lett., vol. 45, no. 4, pp. 309-311, Aug. 1984.
6. 1-xAs-GaAs quantum well heterostructure lasers grown on Si," Appl. Phys. Lett., vol. 51, no. 9, pp. 637-639, Aug. 1987.
7. 1-x As-GaAs vertical-cavity surface-emitting laser grown on Si substrate," Appl. Phys. Lett., vol. 56, no. 8, pp. 740-742, Feb. 1990.
8. D. G. Deppe, N. Holonyak, Jr., K. C. Hsieh, D. W. Nam, and W. E. Plano, "Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si," Appl. Phys. Lett., vol. 52, no. 21, pp. 1812-1814, May 1988.
9. N. Chand, F. Ren, A. T. Macrander, J. P. van der Ziel, A. M. Sergent, R. Hull, S. N. G. Chu, Y. K. Chen, and D. V. Lang, "GaAs-on-Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high-performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators," J. Appl. Phys., vol. 67, no. 5, pp. 2343-2353, Mar. 1990.
10. 0.6As quantum-dot lasers grown on Si substrates," Appl. Phys. Lett., vol. 74, no. 10, pp. 1355-1357, Mar. 1999.
11. H. Wada and T. Kamijoh, "1.3 μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, pp. 937-942, Jun. 1997.
12. H. Wada and T. Kamijoh, "Wafer bonding of InP to Si and its application to optical devices," Jpn. J. Appl. Phys. 1, Regul. Rap. ShortNotes, vol. 37, no. 3B, pp. 1383-1390, Mar. 1998.
13. E. Atmaca, V. Lei, M. Teo, N. Drego, D. Boning, C. G. Fonstad, L. Wan Khai, and Y. S. Fatt, "RM integration of InP based 1.55 μm p-i-n photodetectors with silicon CMOS optical clock distribution circuits," in Proc. 2003 Int. Symp. Compound Semicond. (IEEE Cat. No. 03TH8767), 2004, p. 204.
14. H. C. Lin, K. L. Chang, G. W. Pickrell, K. C. Hsieh, and K. Y. Cheng, "Low temperature wafer bonding by spin on glass," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 20, no. 2, pp. 752-754, Mar. 2002.
15. A. W. Fang, P. Hyundai, R. Jones, O. Cohen, M. J. Paniccia, and J. E. Bowers, "A continuous-wave hybrid AlGaInAs-silicon evanescent laser," IEEE Photon. Technol. Lett., vol. 18, no. 10, pp. 1143-1145, May 2006.
16. B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, "Raman-based silicon photonics," IEEE J. Sel. Topics Quantum Electron., vol. 12, no. 3, pp. 412-421, May/Jun. 2006.
17. O. Kwon, J. J. Boeckl, M. L. Lee, A. J. Pitera, E. A. Fitzgerald, and S. A. Ringel, "Monolithic integration of AlGalnP laser diodes on SiGe/Si substrates by molecular beam epitaxy," J. Appl. Phys., vol. 100, pp. 013103-1-013103-7, Jul. 2006.
18. M. E. Groenert, C. W. Leitz, A. J. Pitera, V. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, "Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers," J. Appl. Phys., vol. 93, pp. 362-367, Jan. 2003.
19. Z. Mi, P. Bhattacharya, J. Yang, and K. P. Pipe, "Room-temperature self-organised In[sub 0.5]Ga[sub 0.5]As quantum dot laser on silicon," Electron. Lett., vol. 41, no. 13, pp. 742-744, Jun. 2005.
20. Z. Mi, J. Yang, P. Bhattacharya, and D. L. Huffaker, "Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon," Electron. Lett., vol. 42, no. 2, pp. 121-123, Jan. 2006.
21. A. Jallipalli, G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, "Modeling misfit dislocation arrays for the growth of low-defect density AlSb on Si," in Proc. Mater. Res. Soc. Symp., 2006, vol. 934, no. 0394-109-05, Apr. 2006.
22. S. H. Huang, G. Balakrishnan, A. Khoshakhlagh, A. Jallipalli, L. R. Dawson, Y.-C. Xin, L. F. Lester, and D. L. Huffaker, "Strain relief by periodic misfit arrays for low defect density GaSb on GaAs," Appl. Phys. Lett., vol. 88, pp. 131911-1-131911-3, Mar. 2006.
23. G. Balakrishnan, S. Huang, L. R. Dawson, Y.-C. Xin, P. Conlin, and D. L. Huffaker, "Growth mechanisms of highly mismatched AlSb on a Si substrate," Appl. Phys. Lett., vol. 86, pp. 034105-1-034105-3, Jan. 2005.
24. G. Balakrishnan, S. Huang, A. Khoshakhlagh, L. R. Dawson, Y.-C. Xin, P. Conlin, and D. L. Huffaker, "High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 23, no. 3, pp. 1010-1012, May 2005.
25. A. Jallipalli, G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, L. R. Dawson, and D. L. Huffaker, "Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials," J. Cryst. Growth, to be published.
26. V. Kumar and B. S. R. Sastry, "Thermal expansion coefficient of binary semiconductors," Cryst. Res. Technol., vol. 36, no. 6, pp. 565-569, Jun. 2001.
27. 0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si," Appl. Phys. Lett., vol. 48, no. 7, pp. 454-456, Feb. 1986.
28. K. Akahane, N. Yamamoto, S. Gozu, and N. Ohtani, "Heteroepitaxial growth of GaSb on Si(0 0 1)," J. Cryst. Growth, vol. 264, no. 1-3, pp. 21-25, Mar. 2004.
29. G. Balakrishnan, S. H. Huang, A. Khoshakhlagh, P. Hill, A. Amtout, S. Krishna, G. P. Donati, L. R. Dawson, and D. L. Huffaker, "Room-temperature optically pumped InGaSb quantum well lasers monolithically grown on Si(1 0 0) substrate," Electron. Lett., vol. 41, no. 9, pp. 531-532, Apr. 2005.
30. D. B. Williams and C. B. Carter, Transmission Electron Microscopy. New York: Kluwer/Plenum, 1996.
31. J. P. Hirth and J. Lothe, Theory of Dislocations, 2nd ed. New York: Wiley, 1982, p. 42.
32. K.-N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin film Science for Electrical Engineers and Materials Scientists. New York: Macmillan, 1992, pp. 408-411.