Growth of GaAs on (100) Ge and vicinal Ge surface by migration enhanced epitaxy

Materials Research Society Symposium Proceedings

Volumn 891, Issue , 2006, Pages 139-144

  Tanoto, Hendrix ^a   Yoon, Soon F ^a,b   Loke, Wan K ^a   Fitzgerald, Eugene A ^b,c   Dohrman, Carl ^c   Narayanan, Balasubramanian ^d   Tung, Chih H ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c Massachusetts Institute of Technology   (United States)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE;

ANTI-PHASE DOMAIN (APD); HETEROEPITAXY; MIGRATION-ENHANCED EPITAXY (MEE); SURFACE ORIENTATION;

EPITAXIAL GROWTH;

EID: 33747376403     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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