Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Reurings, Floris ^a   Tuomisto, Filip ^a   Gallinat, Chad S ^b   Koblmüller, Gregor ^b   Speck, James S ^b  

^a AALTO UNIVERSITY   (Finland)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAN BUFFER; GROWTH CONDITIONS; KINETIC EFFECT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; STRUCTURAL QUALITIES; VACANCY CONCENTRATION; VACANCY DEFECTS; VACANCY FORMATION;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY;

VACANCIES;

EID: 67650737118     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880952     Document Type: Article

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