Electrical properties of GaN/poly(3-hexylthiophene) interfaces

Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

  Park, B N ^a,b   Uhlrich, J J ^a   Kuech, T F ^a   Evans, P G ^a  

^a University of Wisconsin Madison   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BIASED JUNCTIONS; DOPING LEVELS; ELECTRICAL PROPERTY; ELECTRON TRANSPORT; ELECTRONIC AND STRUCTURAL PROPERTIES; ELECTRONIC MATERIALS; MODEL SYSTEM; NANOSTRUCTURED COMPOSITES; PHOTOVOLTAIC DEVICES; SEMICONDUCTOR HETEROJUNCTIONS; TOTAL RESISTANCE; WIDE-BAND-GAP SEMICONDUCTOR;

CARRIER MOBILITY; CONDUCTING POLYMERS; CONTACT RESISTANCE; ELECTRIC PROPERTIES; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; IODINE; POLYMERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

CONTACTS (FLUID MECHANICS);

EID: 67650730217     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159653     Document Type: Article

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