Transient photovoltage in GaN as measured by atomic force microscope tip

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2556-2560

  Reshchikov, M A ^a   Sabuktagin, S ^a   Johnstone, D K ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND BENDING; PHOTOINDUCED DESORPTION; PHOTOVOLTAGE; THERMIONIC TRANSFER;

ADSORPTION; ATOMIC FORCE MICROSCOPY; DESORPTION; DISLOCATIONS (CRYSTALS); ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON EMISSION; ENERGY GAP; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SURFACE PROPERTIES; THERMIONIC EMISSION;

GALLIUM NITRIDE;

EID: 4944234663     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774245     Document Type: Article

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