Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN surfaces: An angle-resolved X-ray photoelectron spectroscopy study

Langmuir

Volumn 24, Issue 16, 2008, Pages 8667-8671

  Arranz, A ^a   Palacio, C ^a   Garcia Fresnadillo D ^b   Orellana, G ^b   Navarro, A ^c   Munoz E ^c  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c Polytechnic University of Madrid   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CORUNDUM; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; FILM GROWTH; GALLIUM NITRIDE; HYDROXYLATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MONOLAYERS; NANOSTRUCTURED MATERIALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING GALLIUM; SILANES; SILICON COMPOUNDS; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; CHEMICAL FUNCTIONALIZATION; GROWTH MODES;

GALLIUM ALLOYS;

3 AMINOPROPYLTRIETHOXYSILANE; GALLIUM; GALLIUM NITRIDE; GAMMA-AMINOPROPYLTRIETHOXYSILANE; SILANE DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; ELECTRON; HYDROXYLATION; SPECTROSCOPY; SURFACE PROPERTY; X RAY;

ELECTRONS; GALLIUM; HYDROXYLATION; MODELS, MOLECULAR; MOLECULAR CONFORMATION; SILANES; SPECTRUM ANALYSIS; SURFACE PROPERTIES; X-RAYS;

EID: 50849085739     PISSN: 07437463     EISSN: None     Source Type: Journal    
DOI: 10.1021/la801259n     Document Type: Article

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