Interfacial chemistry and energy band line-up of pentacene with the GaN (0 0 0 1) surface

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 204-211

  Uhlrich, J ^a   Garcia, M ^b   Wolter, S ^b   Brown, A S ^b   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b Duke University   (United States)

Author keywords

A1. Interfaces; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

BAND STRUCTURE; GALLIUM NITRIDE; INTERFACES (MATERIALS); JUNCTION GATE FIELD EFFECT TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTION FIELD EFFECT TRANSISTOR (HFET); SURFACE FUNCTIONALIZATION; ULTRAVIOLET PHOTOEMISSION MEASUREMENTS; VAPOR DEPOSITED PENTACENE;

OLEFINS;

EID: 33847335432     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.035     Document Type: Article

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