Suppression of phase separation in Hf-silicate films using NH 3 annealing treatment

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Chung, K B ^a   Whang, C N ^a   Cho, M H ^b   Yim, C J ^a   Ko, D H ^a  

^a Yonsei University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENT; ELECTRICAL CHARACTERISTICS; INTERFACIAL LAYERS;

CRYSTALLIZATION; DIFFUSION; HAFNIUM COMPOUNDS; NITROGEN; PERMITTIVITY; SILICATES; THERMAL EFFECTS; THIN FILMS;

PHASE SEPARATION;

EID: 33644505487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2175493     Document Type: Article

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