The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 975-979

  Nabatame, T ^a   Segawa, K ^b   Kadoshima, M ^a   Takaba, H ^a   Iwamoto, K ^a   Kimura, S ^b   Nunoshige, Y ^b   Satake, H ^a   Ohishi, T ^b   Toriumi, Akira ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Effective work function; HfO2; Oxygen content of Ru; Ru; RuO2

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELECTRODES; MOS CAPACITORS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SPECTROSCOPIC ANALYSIS;

EFFECTIVE WORK FUNCTION; HFO2; OXYGEN CONTENT OF RU; RUO2;

RUTHENIUM;

EID: 33846117552     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.013     Document Type: Article

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