Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Wang, M ^a   He, W ^a   Ma, T P ^a   Edge, L F ^b   Schlom, D G ^b  

^a Yale University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR-BEAM DEPOSITION; THIN FILM GATE DIELECTRICS;

CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; INTERFACES (MATERIALS); MOLECULAR BEAMS; MOS DEVICES; SILICON; SPECTROSCOPIC ANALYSIS;

AMORPHOUS FILMS;

EID: 33846985584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437128     Document Type: Article

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