Optimization of Al2O3 interpoly dielectric for embedded flash memory applications

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Volumn , Issue , 2008, Pages 12-15

  Wellekens, Dirk ^a   De Vos, Joeri ^a   Van Houdt, Jan ^a   Van Der Zanden, Koen ^b  

^a IMEC   (Belgium)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Al2O3 IPD; Flash memory; Floating gate; Program erase cycling; Retention

Indexed keywords

ALUMINUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; TECHNOLOGY;

AL2O3 IPD; FLASH MEMORY; FLOATING GATE; INTERNATIONAL CONFERENCES; MEMORY TECHNOLOGY; NON-VOLATILE; PROGRAM/ERASE CYCLING; RETENTION; SEMICONDUCTOR MEMORIES;

ELECTRIC CONDUCTIVITY;

EID: 50249106985     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2008.9     Document Type: Conference Paper

References (5)

1. 3 as inter-poly dielectric in a production proven 130nm embedded flash technology," Proc. ICMTD, pp. 227-230, 2007.
2. J. Power et al., "Improved reliability of high-k IPD flash cell through use of a top oxide," proc. NVSMW, pp. 27-29, 2007.
3. B. Govoreanu et al., "Investigation of aggressively scaled HfAlOx-based interpoly dielectric stacks for sub-45nm nonvolatile memory technologies," Proc. ICMTD, pp. 231-234, 2007.
4. E. Cimpoiasu et al., "Aluminum oxide layers as possible components for layered tunnel barriers," J. Appl. Phys. 2004;92(2), pp. 1088-1093.
5. B. Govoreanu, D.P. Brunco, J. Van Houdt, "Scaling down the interpoly dielectric for next generation flash memory: challenges and opportunities," Solid-State Electronics 49 (2005), pp. 1841-1848.