On the role of a HTO/A12O3 bi-layer blocking oxide in nitride-trap non-volatile memories

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 119-122

  Bocquet, M ^a   Molas, G ^a   Perniola, L ^a   Garros, X ^a   Buckley, J ^a   Gely M ^a   Colonna, J P ^a   Grampeix, H ^a   Martin, F ^a   Vidal, V ^a   Toffoli, A ^a   De Salvo, B ^a   Deleonibus, S ^a   Pananakakis, G ^b   Ghibaudo, G ^b  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES;

ANALYTICAL MODELS; BLOCKING OXIDES; CONTROL GATES; MEMORY PERFORMANCES; NITRIDE TRAPS; PHYSICAL MECHANISMS; PROGRAM/ERASE; VOLATILE MEMORIES;

DATA STORAGE EQUIPMENT;

EID: 58049096948     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681713     Document Type: Conference Paper

References (10)

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