A novel high-κ SONOS memory using TaN/Al2O 3/Ta2O5/HfO2/Si structure for fast speed and long retention operation

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 78-82

  Wang, Xuguang ^b   Kwong, Dim Lee ^a,c  

^a IEEE

^b Submicron Development Center   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Al2O3; HfO2; High dielectrics; Nonvolatile memory; Silicon oxide nitride oxide silicon (SONOS) metal oxide nitride oxide silicon (MONOS)

Indexed keywords

ALUMINA; COMPUTER PROGRAMMING; DURABILITY; HAFNIUM COMPOUNDS; OXIDES; TANTALUM COMPOUNDS;

ALUMINUM OXIDES; METAL OXIDE NITRIDE OXIDE SILICON (MONOS); SILICON OXIDE NITRIDE OXIDE SILICON (SONOS); STRESS CYCLES; SUPERIOR ENDURANCE;

NONVOLATILE STORAGE;

EID: 33746479435     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860637     Document Type: Article

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