Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Ok, Injo ^a   Kim, H ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Garcia, Domingo ^b   Majhi, Prashant ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHARGE TRAPPING; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

FREQUENCY DISPERSION; POST METAL ANNEALING; POSTDEPOSITION ANNEAL (PDA); SILICON INTERFACE PASSIVATION LAYERS;

MOS CAPACITORS;

EID: 44349160650     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917823     Document Type: Article

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