A stepped oxide hetero-material gate trench power MOSFET for improved performance

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1355-1359

  Saxena, Raghvendra S ^a,b   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Breakdown voltage; Gate charge; ON resistance; Power MOSFET; Switching speed; Transconductance; Trench gate

Indexed keywords

BREAKDOWN VOLTAGE; GATE CHARGE; ON-RESISTANCE; POWER MOSFET; SWITCHING SPEED; TRENCH GATE;

AMPLIFICATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GATES (TRANSISTOR); IONIZATION OF GASES; MOS DEVICES; SWITCHING; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 67349218368     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019371     Document Type: Article

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