Dual-material-gate technique for enhanced transconductance and breakdown voltage of trench power MOSFETs

IEEE Transactions on Electron Devices

Volumn 56, Issue 3, 2009, Pages 517-522

  Saxena, Raghvendra S ^a,b   Kumar, Mamidala ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Breakdown voltage; Dual material gate; On resistance; Power MOSFET; Trench gate

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; IONIZATION OF GASES; MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

BREAKDOWN VOLTAGE; DUAL MATERIAL GATE; ON-RESISTANCE; POWER MOSFET; TRENCH GATE;

MOSFET DEVICES;

EID: 62749107900     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2011723     Document Type: Article

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