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1
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84893996103
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Scanner is a semiconductor industry term for tools used to print microprocessor circuit patterns, typically in step-and-scan mode.
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"Scanner" is a semiconductor industry term for tools used to print microprocessor circuit patterns, typically in "step-and-scan" mode.
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2
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84894007570
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See for instance press releases at and, technology/silicon/45nm_technology.htmhttp://www-03.ibm.com/press/us/en/ pressrelease/20980.wss
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See for instance press releases at http://www.intel.com/ technology/silicon/45nm_technology.htm and http://www-03.ibm.com/press/us/en/ pressrelease/20980.wss.
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3
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0000130079
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Extreme ultraviolet lithography
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4
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0035535261
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Multilayer coating and test of the optics for two new 10X Microstepper extreme-ultraviolet lithography cameras
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C. Montcalm, E. Spiller, F. J. Weber, M. Wedowski, and J. A. Folta, "Multilayer coating and test of the optics for two new 10X Microstepper extreme-ultraviolet lithography cameras," J. Vac. Sci. Technol. B 19, 1219-1228 (2001).
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Montcalm, C.1
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5
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84894003827
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The Scheimpflug condition states that the imaging properties of a centered optical system with a tilted object are preserved on a tilted image plane ignoring distortion, For a system used at finite conjugates, the required image plane tilt is the object plane tilt scaled by the reduction ratio
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The Scheimpflug condition states that the imaging properties of a centered optical system with a tilted object are preserved on a tilted image plane (ignoring distortion). For a system used at finite conjugates, the required image plane tilt is the object plane tilt scaled by the reduction ratio.
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6
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84893987556
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D. M. Williamson, The Elusive Diffraction Limit, in Extreme Ultraviolet Lithography, F. Zernike and D. T. Attwood, eds., 23 of 1994 OSA Proceedings (Optical Society of America, 1994), pp. 68-76.
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D. M. Williamson, "The Elusive Diffraction Limit", in Extreme Ultraviolet Lithography, F. Zernike and D. T. Attwood, eds., Vol. 23 of 1994 OSA Proceedings (Optical Society of America, 1994), pp. 68-76.
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7
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17944375589
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Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution
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R. Soufli, E. Spiller, M. A. Schmidt, J. C. Davidson, R. F. Grabner, E. M. Gullikson, B. B. Kaufmann, S. L. Baker, H. N. Chapman, R. M. Hudyma, J. S. Taylor, C. C. Walton, C. Montcalm, and J. A. Folta, "Multilayer optics for an extreme ultraviolet lithography tool with 70 nm resolution," in Emerging Lithographic Technologies V, E. A. Dobisz, ed., Proc. SPIE 4343, 51-59 (2001).
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Soufli, R.1
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Kaufmann, B.B.7
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Hudyma, R.M.10
Taylor, J.S.11
Walton, C.C.12
Montcalm, C.13
Folta, J.A.14
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8
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0036603505
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Atomicprecision multilayer coating of the first set of optics for an extreme-ultraviolet lithography prototype system
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C. Montcalm, R. F. Grabner, R. M. Hudyma, M. A. Schmidt, E. Spiller, C. C. Walton, M. Wedowski, and J. A. Folta, "Atomicprecision multilayer coating of the first set of optics for an extreme-ultraviolet lithography prototype system," Appl. Opt. 41, 3262-3269 (2002).
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Folta, J.A.8
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9
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84894009243
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G. E. Sommargren, Phase shifting diffraction interferometry for measuring extreme ultraviolet optics, in Extreme Ultraviolet Lithography, G. Kubiak and D. Kania, eds., 4 of 1996 OSA Trends in Optics and Photonics (Optical Society of America, 1996), pp. 108-112.
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G. E. Sommargren, "Phase shifting diffraction interferometry for measuring extreme ultraviolet optics," in Extreme Ultraviolet Lithography, G. Kubiak and D. Kania, eds., Vol. 4 of 1996 OSA Trends in Optics and Photonics (Optical Society of America, 1996), pp. 108-112.
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10
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12844284651
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Smoothing of diamond-turned substrates for extreme-ultraviolet illuminators
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R. Soufli, E. Spiller, M. A. Schmidt, J. C. Robinson, S. L. Baker, S. Ratti, M. A. Johnson and E. M. Gullikson, "Smoothing of diamond-turned substrates for extreme-ultraviolet illuminators," Opt. Eng. 43, 3089-3095 (2004).
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Soufli, R.1
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Gullikson, E.M.8
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11
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11144354521
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Fabrication and metrology of diffraction-limited soft x-ray optics for the EUV microlithography
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A. M. Khounsary, U. Dinger, and K. Ota, eds, Proc. SPIE
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U. Dinger, G. Seitz, S. Schulte, F. Eisert, C. Münster, S. Burkhart, S. Stacklies, C. Bustaus, H. Höfer, M. Mayer, B. Fellner, O. Hocky, M. Rupp, K. Riedelsheimer, P. Kürz, "Fabrication and metrology of diffraction-limited soft x-ray optics for the EUV microlithography," in Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications, A. M. Khounsary, U. Dinger, and K. Ota, eds., Proc. SPIE 5193, 18-28 (2004).
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0032654749
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EUV scattering and fiare of 10x projection cameras
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E. M. Gullikson, S. L. Baker, J. E. Bjorkholm, J. Bokor, K. A. Goldberg, J. E. M. Goldsmith, C. Montcalm, P. Naulleau, E. Spiller, D. G. Stearns, J. S. Taylor, and J. H. Underwood, "EUV scattering and fiare of 10x projection cameras," in Emerging Lithographic Technologies III, Y. Vladimirski, ed., Proc. SPIE 3676, 717-723 (1999).
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EUV optical design for a 100 nm CD imaging system
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Vladimirski, ed, Proc. SPIE
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D. W. Sweeney, R. M. Hudyma, H. N. Chapman, and D. Shafer, "EUV optical design for a 100 nm CD imaging system," in Emerging Lithographic Technologies II, Y. Vladimirski, ed., Proc. SPIE 3331, 2-10 (1998).
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84894007978
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For this throughput calculation a total of six reflections were assumed in the MET system, including the mask, the two MET camera optics, and a condenser/illuminator assembly with three elements. Since there was no definite MET condenser design available when this paper was prepared, the choice of number of condenser elements is somewhat arbitrary, but realistic
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For this throughput calculation a total of six reflections were assumed in the MET system, including the mask, the two MET camera optics, and a condenser/illuminator assembly with three elements. Since there was no definite MET condenser design available when this paper was prepared, the choice of number of condenser elements is somewhat arbitrary, but realistic.
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0034768492
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Recent developments in EUV reflectometry at the Advanced Light Source
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A. Dobisz ed, Proc. SPIE
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E. M. Gullikson, S. Mrowka, and B. B. Kaufmann, "Recent developments in EUV reflectometry at the Advanced Light Source," in Emerging Lithographic Technologies V, E. A. Dobisz ed., Proc. SPIE 4343, 363-373 (2001).
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Method and system using power modulation and velocity modulation producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients,
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U.S. patent 6,668,207 23 December
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C. Montcalm, C. C. Walton, and J. A. Folta, "Method and system using power modulation and velocity modulation producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients," U.S. patent 6,668,207 (23 December 2003).
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84894007868
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Code V software, by Optical Research Associates, Pasadena, California
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Code V software, by Optical Research Associates, Pasadena, California.
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B. W. Smith, "Optics for photolithography," in Microlithography: Science and Technology, J. R. Sheats and B. W. Smith, eds. (Marcel Dekker, 1998), pp. 171-270.
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K. A. Goldberg, P. P. Naulleau, P. E. Denham, S. B. Rekawa, K. Jackson, E. H. Anderson, and J. A. Liddle, "At-wavelength alignment and testing of the 0.3-NA MET optic," J. Vac. Sci. Technol. B 22, 2956-2961 (2005).
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