Multi-Channel Field-Effect Transistor (MCFET) - Part II: Analysis of gate stack and series resistance influence on the MCFET performance

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1252-1261

  Bernard, Emilie ^a,b   Ernst, Thomas ^a   Guillaumot, Bernard ^b   Vulliet, Nathalie ^b,c   Garros, Xavier ^a   Coronel, Philippe ^b   Skotnicki, Thomas ^b   Deleonibus, Simon ^a   Faynot, Olivier ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c CEA GRENOBLE   (France)

Author keywords

2 D numerical simulation; 3 D; Gate leakage current; Mobility; Multichannel field effect transistors (MCFETs); Negative bias temperature instability (NBTI); Rseries

Indexed keywords

2-D NUMERICAL SIMULATION; 3-D; GATE LEAKAGE CURRENT; MOBILITY; MULTICHANNEL FIELD-EFFECT TRANSISTORS (MCFETS); NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); RSERIES;

CARRIER MOBILITY; LOGIC GATES; MATHEMATICAL MODELS; MOS CAPACITORS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NUMERICAL METHODS; SILICIDES; THERMODYNAMIC STABILITY; THREE DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 66949139758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019155     Document Type: Article

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