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Volumn 102, Issue 10, 2007, Pages

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

(13) Dupr C a Ernst, T a Hartmann, J M a Andrieu, F a Barnes, J P a Rivallin, P a Faynot, O a Deleonibus, S a Fazzini, P F b Claverie, A b Cristoloveanu, S c Ghibaudo, G c Cristiano, F b

a CEA LETI (France)

b UNIVERSITÉ DE TOULOUSE (France)

c IMEP LAHC (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; DEFECT DENSITY; DEFECTS; DEGRADATION; IMAGING SYSTEMS; MORPHOLOGY; MOSFET DEVICES; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

DRAIN REGIONS; ELECTRICAL MEASUREMENTS; HIGH DOSE IMPLANTATION;

ULTRATHIN FILMS;

EID: 36749009699 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2811922 Document Type: Article

Times cited : (24)

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