Mobility of strained and unstrained short channel FD-SOI MOSFETs: New insight by magnetoresistance

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 170-171

  Casse M ^a   Rochette, F ^a   Bhouri, N ^a   Andrieu, F ^a   Maude, D K ^b   Mouis, M ^c   Reimbold, G ^a   Boulanger, F ^a  

^a CEA LETI   (France)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; KETONES; MAGNETIC FIELD EFFECTS; MAGNETIC FIELDS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SCATTERING; SILICON; STANDARDS; TECHNOLOGY;

AND GATES; COULOMB SCATTERING; GA TE LENGTHS; GATE CAPACITANCE; INVERSION CHARGES; LINEAR REGIME; MAGNETORESISTANCE MEASUREMENTS; MOBILITY SCATTERING; SHORT CHANNELS; SOI-MOSFETS; STRAINED SI MOSFETS; TEMPERATURE DEPENDENCES; VLSI TECHNOLOGIES;

MOSFET DEVICES;

EID: 51949090677     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588606     Document Type: Conference Paper

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