Multi-Channel Field-Effect Transistor (MCFET) - Part I: Electrical performance and current gain analysis

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1243-1251

  Bernard, Emilie ^a,b   Ernst, Thomas ^b   Guillaumot, Bernard ^a   Vulliet, Nathalie ^a   Coronel, Philippe ^a,b   Skotnicki, Thomas ^a   Deleonibus, Simon ^b   Faynot, Olivier ^b  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

Author keywords

3 D; Current gain; ION IOFF; Mobility; Model; Multichannel field effect transistors (MCFETs); Simulations

Indexed keywords

3-D; CURRENT GAIN; ION/IOFF; MOBILITY; MULTICHANNEL FIELD-EFFECT TRANSISTORS (MCFETS); SIMULATIONS;

DRAIN CURRENT; ELECTRIC NETWORK ANALYSIS; ELECTROSTATIC DEVICES; ELECTROSTATICS; LOGIC GATES; SIMULATORS; THREE DIMENSIONAL; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 66949172861     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019700     Document Type: Article

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