Impact of isotropic plasma etching on channel Si surface roughness measured by AFM and on NMOS inversion layer mobility

ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Volumn , Issue , 2008, Pages 133-136

  Dupre C ^a,b   Ernst, T ^a   Borel, S ^a   Morand, Y ^c   Descombes, S ^c   Guillaumot, B ^c   Garros, X ^a   Becu S ^a   Mescot, X ^b   Ghibaudo, G ^b   Deleonibus, S ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ETCHING; IMAGING TECHNIQUES; INSTRUMENT SCALES; NONMETALS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; SILICON; SURFACE ROUGHNESS;

FIXED CHARGES; INTERNATIONAL CONFERENCES; INVERSION LAYER MOBILITY; ISOTROPIC PLASMA; LOW FIELDS; MULTI-CHANNEL DEVICES; RMS VALUES; SELECTIVE ETCHING; SI SURFACE; TRANSVERSE-ELECTRIC FIELDS;

SILICON WAFERS;

EID: 49049087977     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2008.4527157     Document Type: Conference Paper

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