High thermal conductivity of gallium nitride (GaN) crystals grown by HVPE process

Materials Transactions

Volumn 48, Issue 10, 2007, Pages 2782-2786

  Shibata, Hiroyuki ^a   Waseda, Yoshio ^a   Ohta, Hiromichi ^b   Kiyomi, Kazumasa ^c   Shimoyama, Kenji ^c   Fujito, Kenji ^c   Nagaoka, Hirobumi ^c   Kagamitani, Yuji ^a   Simura, Rayko ^a,d   Fukuda, Tsuguo ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b IBARAKI UNIVERSITY   (Japan)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Gallium nitride; Laser flash method; Thermal conductivity; Thermal diffusivity; Thermal expansion

Indexed keywords

HYDRIDE VAPOR PHASE EPITAXY (HVPE); LASER FLASH METHOD; ROOM TEMPERATURE; SPECIFIC HEAT CAPACITY;

DIFFERENTIAL SCANNING CALORIMETRY; DILATOMETERS; LASER APPLICATIONS; RELIABILITY; SILICON CARBIDE; SINGLE CRYSTALS; SPECIFIC HEAT; THERMAL CONDUCTIVITY; THERMAL DIFFUSIVITY; THERMAL EXPANSION;

GALLIUM NITRIDE;

EID: 36649032929     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MRP2007109     Document Type: Conference Paper

References (19)

1. M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur: Properties of advanced semiconductor materials: CaN, AlN, InN, BN, SiC, SiGe, (John Wily & Sons, U.K., 2001) 1-23, 93-137.
2. E. K. Sichel and J. I. Pankove: J. Phys. Chem. Solids 38 (1977) 330.
3. G. A. Slack: J. Phys. Chem. Solids 34 (1973) 321-335.
4. A. Witek: Diamond and Related Materials 7 (1998) 962-964.
5. D. I. Florescu, V. M. Asnin, F. H. Pollak, R. J. Molnar and C. E. C. Wood: J. Appl. Phys. 88 (2000) 3295-3300.
6. D. I. Florescu, V. M. Asnin, F. H. Pollak, A. M. Jones, J. C. Ramer, M. J. Schuraman and I. Ferguson: App. Phys. Lett. 77 (2000) 1464-1466.
7. C.-Y. Luo, H. Marchand, D. R. Clarke and S. P. DenBarrs: App. Phys. Lett. 75 (1999) 4151-4153.
8. G. A. Slack, L. J. Schowalter, D. Morelli and J. A. Freitas Jr.: J. Crystal Growth 246 (2002) 287-298.
9. A. Jezowski, B. A. Danilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski and T. Paszkiewicz: Solid State Comm. 128 (2003) 69-73.
10. H. Ohta, T. Tsukada, Y. Tomota, H. Shibata, G. Ogura and Y. Waseda: J. Ceram. Soc. Japan, Inter. Edition 99 (1991) 471-476.
11. H. Shibata, H. Ohta, A. Suzuki and Y. Waseda: Mater. Trans. 41 (2000) 1616-1620.
12. T. Nishi, H. Shibata, H. Ohta, N. Nishiyama and Y. Waseda: Phys. Rev. B 70 (2004) 174204-1-174204-5.
13. T. Nishi, H. Shibata, H. Ohta and Y. Waseda: Metall. Trans. A 34A (2003) 2801-2807.
14. T. Nishi, H. Shibata, H. Ohta, N. Nishiyama, A. Inoue and Y. Waseda: J. Jpn. Inst. Met. 68 (2004) 499-502. (in Japanese).
15. W. J. Parker, R. J. Jenkins, C. P. Butler and G. L. Abbott: J. Appl. Phys. 32 (1961) 1679-1684.
16. T. Azumi and Y. Takahashi: Rev. Sci. Instrum. 52 (1981) 1411-1413.
17. Thermophysical properties handbook, ed. by Japan Society of Thermophysical Properties (Yokendou, Tokyo, 1990) 23-28.
18. K. T. Jacob, S. Singh and Y. Waseda (submitted to J. Mater. Res.).
19. O. Nilsson, H. Mehling, R. Horn, J. Fricke, R. Hofmann, S. G. Muller, R. Eckstein and D. Hofmann: High Temperature-High Pressures 29 (1997) 73-79.