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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2215-2218

Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

(5) Oshima, Yuichi a Yoshida, Takehiro a Eri, Takeshi a Shibata, Masatomo a Mishima, Tomoyoshi a

a HITACHI CABLE LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION REGION; ELECTRICAL PROPERTIES; HIGH-QUALITY; NITRIDE SEMICONDUCTORS;

BIOACTIVITY; CIVIL AVIATION; COMMUNICATION CHANNELS (INFORMATION THEORY); CONCENTRATION (PROCESS); CRYSTALLOGRAPHY; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

CARRIER CONCENTRATION;

EID: 49749100425 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200674719 Document Type: Conference Paper

Times cited : (29)

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