Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 37-41

  Williams, Adrian D ^a   Moustakas, T D ^a  

^a Boston University   (United States)

Author keywords

A1. Substrates; A2. Growth from vapor; A3. Hydride vapor phase epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; ETCHING; NUCLEATION; SAPPHIRE; SUBSTRATES; THICK FILMS; VAPOR PHASE EPITAXY;

GROWTH FROM VAPOR; HYDRIDE VAPOR PHASE EPITAXY (HVPE); NATURAL SEPARATION MECHANISMS; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE;

EID: 33847285380     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.224     Document Type: Article

References (23)

1. Liu L., and Edgar J.H. Mater. Sci. Eng. R 37 (2002) 61-127
2. Moustakas T.D., Molnar R.J., Lei T., Menon G., and Eddy Jr. C.R. Mater. Res. Soc. Symp. Proc. 242 (1992) 427
3. Moustakas T.D., Lei T., and Molnar R.J. Physica B 185 (1993) 36
4. Nam O.-H., Bremser M.D., Zheleva T.S., and Davis R.F. Appl. Phys. Lett. 71 (1997) 2638
5. Fu Y., et al. J. Appl. Phys. 99 (2006) 033518
6. Ng H.M., Doppalapudi D., Moustakas T.D., Weimann N.G., and Eastman L.F. Appl. Phys. Lett. 73 (1998) 821
7. Miyajima T., et al. Phys. Stat. Sol. B 228 (2001) 395
8. Nakamura S., et al. Appl. Phys. Lett. 72 (1998) 211
9. Kozodoy P., Ibbetson J.P., Marchard H., Fini P.T., Keller S., Speck J.S., DenBaars S.P., and Mishra U.K. Appl. Phys. Lett. 73 (1998) 975
10. Cao X.A., Teetsov J.A., Shahedipour-Sandvik F., and Arthur S.D. J. Crystal Growth 264 (2004) 172
11. Kim H.M., Oh J.E., and Kang T.W. Mater. Lett. 47 (2001) 276
12. Motoki K., et al. Mater. Sci. Eng. B 93 (2002) 123
13. R.P. Vaudo, G.R. Brandes, J.S. Flynn, X. Xu, M.F. Chriss, C.S. Christos, D.M. Keogh, F.D. Tamweber, Proceedings of the IWN2000, IPAP Conference Series C1, Nagoya, Japan, 2000, p. 15.
14. Y Oshima, T Eri, M Shibata, H Sunakawa, K Kobayashi, T Ichihashi, A Usui, Jpn. J. Appl. Phys. Lett. 42 (1A-B)(2003)L1-L3.
15. Molnar R.J., Gotz W., Romano L.T., and Johnson N.M. J. Crystal Growth 178 (1997) 147
16. Etzkorn E.V., and Clarke D.R. J. Appl. Phys. 89 (2001) 1025
17. Monemar B., Larson H., Hemmingsson C., Ivanov I.G., and Gogova D. J. Crystal Growth 281 (2005) 17
18. Leszczynski M., Suski T., Teisseyre H., Perlin P., Grzegory I., Jun J., Porowski S., and Moustakas T.D. J. Appl. Phys. 76 (1994) 4909
19. Ohring M. The Materials Science of Thin Films (1992), Academic Press, London p. 419
20. Stepanov S., Wang W.N., Yavich B.S., Bougrov V., Rebane Y.T., and Shreter Y.G. MRS Internet J. Nitride Semicond. Res. 6 (2001) 6
21. Kucheyev S.O., Bradby J.E., Williams J.S., Jagasish C., Toth M., Phillips M.R., and Swain M.V. Appl. Phys. Lett. 77 (2000) 3373
22. Nemat-Nasser S., and Hori M. J. Appl. Phys. 62 (1987) 2746
23. Koleske D.D., Coltrin M.E., Allerman A.A., Cross K.C., Mitchell C.C., and Figiel J.J. Appl. Phys. Lett. 82 (2003) 8