Optical process for liftoff of group III-nitride films

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages R3-R4

  Kelly, M K ^a   Ambacher, O ^a   Dimitrov, R ^a   Handschuh, R ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER APPLICATIONS; PYROLYSIS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEPARATION;

FILM LIFTOFF; GALLIUM NITRIDE FILM;

SEMICONDUCTING FILMS;

EID: 0030649030     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396x(199701)159:13.0.co;2-f     Document Type: Article

References (2)

1. M. K. KELLY, O. AMBACHER, B. DAHLHEIMER, G. GROOS, R. DIMITROV, H. ANGERER, and M. STUTZMANN, Appl. Phys. Lett. 69, 1749 (1996).
2. O. AMBACHER, R. DIMITROV, D. LENTZ, T. METZGER, W. RIEGER, and M. STUTZMANN, J. Crystal Growth 167, 1 (1996).