Nitride-based MIS-like diodes with semi-insulating Mg-doped GaN cap layers

Semiconductor Science and Technology

Volumn 21, Issue 10, 2006, Pages 1422-1424

  Chang, S J ^a   Yu, C L ^a   Chang, P C ^b   Lin, Y C ^a   Chen, C H ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LEAKAGE CURRENTS; MAGNESIUM PRINTING PLATES; NANOTECHNOLOGY; NITRIDES; SEMICONDUCTOR DOPING;

MG-DOPED GAN CAP LAYERS; NITRIDE-BASED MIS-LIKE DIODES; POTENTIAL BARRIERS; SEMI-INSULATING MG-DOPED GAN CAP LAYERS;

DIODES;

EID: 33748860745     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/009     Document Type: Article

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