Novel photodetectors based on InGaN/GaN multiple quantum wells

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2658-2662

  Rivera, C ^a   Pau, J L ^a   Naranjo, F B ^a   Munoz E ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCONDUCTING MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; PHOTOCONDUCTIVITY; PHOTODETECTORS; PHOTODIODES; SENSORS;

MULTICOLOUR DETECTION PIXELS; MULTIPLE QUANTUM WELLS (MQW); PHOTOCONDUCTIVE GAIN; PHOTODETECTION EFFICIENCY; POLARIZATION FIELDS; SCHOTTKY BARRIERS;

PHOTODETECTORS; SEMICONDUCTOR QUANTUM WELLS;

EID: 6344250665     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405019     Document Type: Conference Paper

References (6)

1. E. Muñoz, E. Monroy, J. L. Pau, F. Calle, F. Omnès, and P. Gibart, J. Phys.: Condens Matter 13, 7115 (2001).
2. H. C. Yang, T. Y. Lin, and Y. F. Chen, Appl. Phys. Lett. 78, 338 (2001).
3. N. Shibata, phys. stat. sol. 192, 254 (2002).
4. F. B. Naranjo, S. Fernández, M. A. Sánchez-García, F. Calle, E. Calleja, A. Trampert, and K. H. Ploog, Mater. Sci. Eng. B 93, 131 (2002).
5. Yan-Kuin Su, Shoou-Jinn Chang, Yu-Zung Chiou, Tzong-Yow Tsai, Jeng Gong, Yi-Chao Lin, Sen-Hai Liu, and Chia-Sheng Chang, Solid State Electron. 47, 879 (2003).
6. G. Snider, ID Poisson/Schrödinger, http://www.nd.edu/~gsnider/, e-mail: snider.7@nd.edu (1997).