Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2834-2836

  Banal, Ryan G ^a   Funato, Mitsuru ^a   Kawakami, Yoichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

A2. Metal organic vapor phase epitaxy; B1. Nitrides; B1. Semiconducting III V materials

Indexed keywords

ALUMINUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SAPPHIRE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

GROWTH CHARACTERISTIC; GROWTH PARAMETERS; METAL-ORGANIC VAPOR PHASE EPITAXY; MIGRATION ENHANCED EPITAXY; OPTIMAL CONDITIONS; SAPPHIRE SUBSTRATES; SEMI CONDUCTING III-V MATERIALS; SIMULTANEOUS SOURCES;

NITROGEN COMPOUNDS;

EID: 65749098836     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.023     Document Type: Article

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