Improvement of AI-polar AIN layer quality by three-stage flow-modulation metalorganic chemical vapor deposition

Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

  Takeuchi, Misaichi ^a,b,c   Ooishi, Shin ^b   Ohtsuka, Takumi ^b   Maegawa, Tomohiro ^b   Koyama, Takahiro ^d   Chichibu, Shigefusa F ^d   Aoyagi, Yoshinobu ^a,b,c  

^a RIKEN   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c RITSUMEIKAN UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODEL STRUCTURES; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPORS;

CRYSTALLINE QUALITIES; EXCITON FINE STRUCTURES; GROWTH MODELS; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; STAGE III; SURFACE COVERAGES; TRIMETHYL ALUMINUMS; X-RAY DIFFRACTIONS;

MODULATION;

EID: 57049109353     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.021102     Document Type: Article

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