Structural and spectroscopic properties of AlN layers grown by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 383-386

  Thapa, S B ^a   Kirchner, C ^a   Scholz, F ^a   Prinz, G M ^a   Thonke, K ^a   Sauer, R ^a   Chuvilin, A ^a   Biskupek, J ^a   Kaiser, U ^a   Hofstetter, D ^b  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

A1. HRXRD; A1. Surface morphology; A3. MOVPE; A3. Superlattice; B1. AlN

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GROWTH PARAMETERS; HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD); OPTIMIZED GROWTH PROCESSES; SAPPHIRE SUBSTRATES;

CRYSTAL GROWTH;

EID: 33846445301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.142     Document Type: Article

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