Optimization of high-quality AlN epitaxially grown on (0001) sapphire by metal-organic vapor-phase epitaxy

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 533-537

  Xi, Y A ^a   Chen, K X ^a   Mont, F ^b   Kim, J K ^b   Schubert, E F ^a,b   Wetzel, C ^a   Liu, W ^c   Li, X ^c   Smart, J A ^c  

^a Research Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Crystal IS Inc   (United States)

Author keywords

AlGaN; Light emitting diodes; Metal organic vapor phase epitaxy; Nitrides

Indexed keywords

ADATOM-DIFFUSION-ENHANCEMENT; ALUMINUM NITRIDE (ALN); CRYSTALLINE QUALITY; GROWTH PARAMETERS;

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 34249109511     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0099-3     Document Type: Conference Paper

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