Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy

Applied Physics Letters

Volumn 92, Issue 24, 2008, Pages

  Banal, Ryan G ^a   Funato, Mitsuru ^a   Kawakami, Yoichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; FILM GROWTH; LIGHT METALS; MICROFLUIDICS; MOLECULAR BEAM EPITAXY; NITROGEN; NUCLEATION; SAPPHIRE; SURFACE RELAXATION; SURFACES; THREE DIMENSIONAL; VAPORS; X RAY DIFFRACTION ANALYSIS;

(1 1 0) SURFACE; (8 HYDROXY QUINOLINE) ALUMINUM; (PL) PROPERTIES; ALN LAYERS; AMERICAN INSTITUTE OF PHYSICS (AIP); ATOMICALLY FLAT SURFACES; FILM QUALITIES; GROWTH SEQUENCES; LATTICE RELAXATIONS; LINE WIDTHS; METAL ORGANIC VAPOR PHASE EPITAXY (MOVPE); NITROGEN SOURCES; NUCLEATION PROCESSES; RIDGE STRUCTURES; SAPPHIRE SUBSTRATES; THREE-DIMENSIONAL (3D) ISLANDS; X RAY DIFFRACTION (XRD);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 45749140445     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937445     Document Type: Article

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