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Volumn 92, Issue 24, 2008, Pages

Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; FILM GROWTH; LIGHT METALS; MICROFLUIDICS; MOLECULAR BEAM EPITAXY; NITROGEN; NUCLEATION; SAPPHIRE; SURFACE RELAXATION; SURFACES; THREE DIMENSIONAL; VAPORS; X RAY DIFFRACTION ANALYSIS;

EID: 45749140445     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937445     Document Type: Article
Times cited : (114)

References (17)
  • 15
    • 49749207818 scopus 로고
    • AMETAR 0001-6160 10.1016/0001-6160(57)90122-0.
    • C. G. Dunn and E. F. Koch, Acta Metall. AMETAR 0001-6160 10.1016/0001-6160(57)90122-0 5, 548 (1957).
    • (1957) Acta Metall. , vol.5 , pp. 548
    • Dunn, C.G.1    Koch, E.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.