Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 257-263

  Kaeding, John F ^a   Wu, Yuan ^a   Fujii, Tetsuo ^b   Sharma, Rajat ^a   Fini, Paul T ^a,b   Speck, James S ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A1. Crystal morphology; A1. Line defects; A3. Low press; B1. Nitrides; B3. Light emitting diodes; Metalorganic vapor phase epitaxy

Indexed keywords

CRYSTAL DEFECTS; DEBONDING; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); EXCIMER LASERS; LASER APPLICATIONS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

CRYSTAL MORPHOLOGY; DISLOCATION DENSITY; LINE DEFECTS; LOW PRESSURE METALORGANIC VAPOR PHASE EPITAXY;

ALUMINUM NITRIDE;

EID: 9944233435     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.132     Document Type: Conference Paper

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