Tensile strain introduced in AlN layer grown by metal-organic vapor-phase epitaxy on (0001) 6H-SiC with (GaN/AlN) buffer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 5 B, 1999, Pages

  Kurimoto, Makoto ^a   Nakada, Toshiyuki ^a   Ishihara, Yoshiyuki ^a   Shibata, Masao ^a   Honda, Tohru ^a   Kawanishi, Hideo ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL ORIENTATION; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STRAIN; TENSILE STRESS;

ALTERNATING SOURCE FEEDING TECHNIQUE; ALUMINUM NITRIDE; BUFFER LAYERS; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032672007     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l551     Document Type: Article

References (12)