The atomic structure of InAs quantum dots on GaAs(1 1 2)A

Surface Science

Volumn 595, Issue 1-3, 2005, Pages 194-202

  Suzuki, T ^a   Temko, Y ^a   Xu, M C ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

Faceting; Gallium arsenide; High index single crystal surfaces; Indium arsenide; Molecular beam epitaxy; Photoluminescence; Quantum dots; Scanning tunneling microscopy

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON TUNNELING; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC STRUCTURE; FACETING; HIGH-INDEX SINGLE CRYSTAL SURFACES; SHALLOW HOLES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 27644572714     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.08.011     Document Type: Article

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