InAs quantum dots on the GaAs (5̄ 2̄ 11̄)B surface

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3680-3682

  Temko, Y ^a   Suzuki, T ^a   Xu, M C ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

SELF-ORGANIZED QUANTUM DOTS; STRANSKI-KRASTANOW GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0344928518     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1624472     Document Type: Article

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