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Volumn 89, Issue 1-3, 2002, Pages 171-175
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Growth and characterization of Ge islands on Si(1 1 0)
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Author keywords
Atomic force microscopy; Ge; Islands; Low pressure chemical vapour deposition; Photoluminescence; Si(1 1 0)
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CHEMICAL VAPOR DEPOSITION;
EPITAXIAL GROWTH;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SELF ASSEMBLY;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SPECTROSCOPIC ANALYSIS;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0037074811
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(01)00836-4 Document Type: Conference Paper |
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Times cited : (9)
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References (11)
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