Electronic and elastic contributions in the enhanced stability of Ge(1 0 5) under compressive strain

Surface Science

Volumn 556, Issue 2-3, 2004, Pages 121-128

  Migas, D B ^a   Cereda, S ^a   Montalenti, F ^a   Miglio, Leo ^a  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Density functional calculations; Germanium; Semi empirical models and model calculations; Silicon; Surface energy; Surface relaxation and reconstruction

Indexed keywords

COMPRESSIVE STRESS; DIMERS; INTERFACIAL ENERGY; LATTICE CONSTANTS; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE CHEMISTRY; SURFACE TOPOGRAPHY;

DENSITY FUNCTIONAL CALCULATIONS; SEMI-EMPIRICAL MODELS AND MODEL CALCULATIONS; SEMIEMPIRICAL POTENTIALS; SURFACE RELAXATION AND RECONSTRUCTION;

GERMANIUM METALLOGRAPHY;

EID: 2042542047     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.03.023     Document Type: Article

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