Ge molecular beam epitaxy on Si(113): Surface structures, nanowires and nanodots

Surface and Interface Analysis

Volumn 36, Issue 2, 2004, Pages 114-118

  Zhang, Zhaohui ^a   Sumitomo, Koji ^b   Omi, Hiroo ^b   Ogino, Toshio ^b   Zhu, Xing ^a  

^a PEKING UNIVERSITY   (China)

^b Bio Medical Informatics Research Center   (Japan)

Author keywords

Ge; MBE; Nanowires; Si; STM

Indexed keywords

CHEMICAL RELAXATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SILICON; STRESSES; SURFACE STRUCTURE;

EPITAXIAL STRESS EVOLUTION; ISLAND SHAPE TRANSITION; NANODOTS; NANOWIRES;

GERMANIUM;

EID: 1642484430     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1664     Document Type: Article

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