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Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6160-6169

Ion beam induced recrystallization of amorphous silicon: A molecular dynamics study

(4) Marqués, Luis A a,c Caturla, María J a,d Díaz De La Rubia, Tomás a Gilmer, George H b

a LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

b LUCENT TECHNOLOGIES (United States)

c UNIVERSITY OF VALLADOLID (Spain)

d UNIVERSITY OF ALICANTE (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001505289 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.363690 Document Type: Article

Times cited : (54)

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