Multiscale approach for the analysis of channeling profile measurements of ion implantation damage

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 360-363

  Hobler, G ^a   Otto, G ^a   Kovac D ^a   Palmetshofer, L ^b   Mayerhofer, K ^a   Piplits, K ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Atom positions; Binary collision simulation; Channeling profile measurement; Ion implantation; Kinetic Monte Carlo simulation; Radiation damage

Indexed keywords

ATOM POSITIONS; BINARY COLLISION SIMULATION; CHANNELING PROFILE MEASUREMENT; KINETIC MONTE CARLO SIMULATION;

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; DISSOLUTION; DOPING (ADDITIVES); KINETIC THEORY; MONTE CARLO METHODS; RADIATION DAMAGE; THERMAL EFFECTS;

ION IMPLANTATION;

EID: 11344277018     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.070     Document Type: Conference Paper

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