Role of silicon interstitials in boron cluster dissolution

Applied Physics Letters

Volumn 86, Issue 3, 2005, Pages 1-3

  Aboy, Maria ^a   Pelaz, Lourdes ^a   Marqús, Luis A ^a   López, Pedro ^a   Barbolla, Juan ^a   Duffy, R ^b   Venezia, V C ^b   Griffin, Peter B ^c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DEFECTS; DISSOLUTION; EPITAXIAL GROWTH; ION IMPLANTATION; MONTE CARLO METHODS; OXIDATION; SUPERSATURATION;

MONTE CARLO ATOMISTIC SIMULATIONS; PREMORPHIZING IMPLANTS; RANGE DEFECTS; SOLID PHASE EPITAXIAL REGROWTH;

SILICON;

EID: 17044405098     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852728     Document Type: Article

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