Prediction of the morphology of the as-implanted damage in silicon using a novel combination of BCA and MD simulations

Materials Science in Semiconductor Processing

Volumn 3, Issue 4, 2000, Pages 317-323

  Posselt, Matthias ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; ION IMPLANTATION; MOLECULAR DYNAMICS; MORPHOLOGY;

BINARY COLLISION APPROXIMATION (BCA);

SEMICONDUCTING SILICON;

EID: 0034240617     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00050-0     Document Type: Article

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