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Volumn , Issue , 2004, Pages 851-854
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45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CARRIER MOBILITY;
ELECTRIC CURRENTS;
ELECTRODES;
ETCHING;
GATES (TRANSISTOR);
PHYSICAL VAPOR DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR JUNCTIONS;
METALS;
MOS DEVICES;
MOSFET DEVICES;
NITROGEN COMPOUNDS;
SILICON COMPOUNDS;
CAPACITANCE EQUIVALENT THICKNESS (CET);
GATE LEAKAGE;
METAL ETCHING;
OXYNITRIDE GATE DIELECTRICS;
MOSFET DEVICES;
TANTALUM COMPOUNDS;
CAPACITANCE-EQUIVALENT THICKNESS;
GATE STACKS;
GATE-LEAKAGE;
HIGH DRIVE CURRENT;
METAL ETCH;
METAL GATE ELECTRODES;
METAL-GATE;
NMOSFETS;
OFF STATE;
ON STATE CURRENT;
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EID: 21644463571
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (14)
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References (6)
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