45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 851-854

  Henson, K ^a   Lander, R J P ^b   Demand, M ^a   Dachs, C J J ^b   Kaczer, B ^a   Deweerd, W ^a   Schram, T ^a   Tokei, Z ^a   Hooker, J C ^b   Cubaynes, F N ^b   Beckx, S ^a   Boullart, W ^a   Coenegrachts, B ^c   Vertommen, J ^c   Richard, O ^a   Bender, H ^a   Vandervorst, W ^a   Kaiser, M ^b   Everaert, J L ^a   Jurczak, M ^a   Biesemans, S ^a   more..

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c LAM RESEARCH CORPORATION   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRODES; ETCHING; GATES (TRANSISTOR); PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; METALS; MOS DEVICES; MOSFET DEVICES; NITROGEN COMPOUNDS; SILICON COMPOUNDS;

CAPACITANCE EQUIVALENT THICKNESS (CET); GATE LEAKAGE; METAL ETCHING; OXYNITRIDE GATE DIELECTRICS;

MOSFET DEVICES; TANTALUM COMPOUNDS;

CAPACITANCE-EQUIVALENT THICKNESS; GATE STACKS; GATE-LEAKAGE; HIGH DRIVE CURRENT; METAL ETCH; METAL GATE ELECTRODES; METAL-GATE; NMOSFETS; OFF STATE; ON STATE CURRENT;

EID: 21644463571     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. N. Yang, et al, IEDM Tech. Dig, 1999, p. 453.
2. B. Hornung et al, Symp. on VLSI Tech, pp. 85-86, 2003.
3. S. Zhao et al, Symp. On VLSI Tech, pp. 14-15, 2004.
4. T. Ghani et al, IEDM Tech. Digest, pp. 978-980, 2003.
5. J. Kedzierski et al, IEDM Tech. Digest, pp. 441-444, 2003.
6. F. Arnaud et al, Symp. on VLSI Tech, pp. 10-11, 200.